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Electron paramagnetic resonance and capacitance-voltage studies of hydrogen passivated Si-SiO2 interfaces indicate that UV irradiation of the interface does not result in the creation of new Pb centers or interface states providing no photocurrent is allowed to pass through the oxide. This is in contrast to the generally known fact that UV irradiation with photoinjection does form interface states.
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Brower et al. (1990) studied this question.
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