The paper reports the study of the effect of Zr contents on the dielectric, ferroelectric, leakage current and fatigue properties of Ba (Zr x Ti1 − x ) O3 films. All these films exhibited high dielectric constant, which tends to be maximum for 5 at % (BZT5) Zr doped BaTiO3 film. The dielectric properties at the sub-switching ac oscillation field were analyzed following Rayleigh formalism. The reversible component of the switchable measured polarization was separated out by measuring both polarization hysteresis and capacitance bias voltage characteristics. This method was utilized to detect the defect-domain wall interaction present in the material. Current-voltage characteristics were found to be ohmic in nature. Fatigue free characteristics were observed for parent material (BaTiO3) as well as for 5% Zr substituted film.
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Katiyar et al. (2005) studied this question.
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