The Structure and I-V Property of a-C:F Thin Film

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Fluorinated amorphous carbon (a-C:F) thin film has been deposited by microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using C 6 H 6 and CHF 3 as source gases. The result of x-ray photoelectron spectroscopy (XPS) shows that the main bonds in the film as-deposited are C-C, C-F and CF 2 . The measurement of postive I-V property indicates that the conductance of the film presents Omic characteristic at a lower electric field, and follows Schotty emission at a higher electric field.