Barium titanate films on silicon wafers have been obtained by spinning of the alkoxide solution in butyl alcohol. Application and crystallization conditions have been studied. The best characteristics were achieved for the samples with a Si3N4 protective sublayer annealed at 700°C; formation of the ferroelectric tetrahedral phase occurs only after annealing of the films above 900°C.
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Воротилов et al. (1991) studied this question.
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