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PLZT films are prepared by rf diode sputtering using a ceramic target. Substrate temperatures above 500°C during the process are necessary to obtain perovskite ferroelectric films in situ. A thermal annealing destroys the surface of the films and they can no longer be used for optical application. The physical properties of the films are shortly discussed, and some characteristics of thin film transistors with PLZT films as gate insulators are shown.
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Völz et al. (1984) studied this question.
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