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The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid is studied as a selective etchant of over Si. It is found that the solution has a very high selectivity of etching over Si. Etch rates for various samples with differing mole fractions of are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.
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Chang et al. (1991) studied this question.
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