A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer (50nm) grown at a low temperature (≈500°C) on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAs∕Ge heterointerface decrease.