Copper-doped 10-nm-thick vacuum-deposited Ge films between vitreous aluminosilicate insulator films can be crystallized at 400°C, with hole mobilities of 80 cm2/V.s. They yield stable p-type TFT's with 105on/off ratio which are process-compatible with n-type CdSe TFT's and thus usable for complementary on-board shift registers in active matrix displays.
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Fischer et al. (1983) studied this question.
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