Low coupling losses between InP/InGaAsP optical amplifiers and monolithically integrated waveguides

Over 90% coupling efficiencies were achieved for optical amplifiers integrated with butt-jointed waveguides operating at 1.3 mu m. The measurements were performed passively at lambda =1.53 mu m. The optical amplifiers and the waveguides in InP/InGaAsP were grown in two stages with low pressure metal organic vapor phase epitaxy (LP-MOVPE). Stop-etch layers and optimized design eased fabrication tolerances.>