Impact of charge trapping on the ferroelectric switching behavior of doped HfO2

In order to analyse the interplay between ferroelectric switching and parasitic charge trapping in ferroelectric doped hafnium oxide, a metal ferroelectric metal capacitor and grain boundary model is implemented in TCAD. In our study, we present how bulk traps inside the ferroelectric material, traps at the interface with the electrodes are impacting the ferroelectric switching behaviour. Switching peak splitting was observed experimentally, and reproduced by TCAD simulation. Furthermore, the influence of DC voltage stress on the switching behaviour is investigated experimentally and compared to the already known AC‐behaviour. DC stress of the FeCAP redistributes the charge within the device influencing the kinetics of the ferroelectric switching and causing the peak split.