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August 29, 2012IEEE Transactions on Device and Materials Reliability

Reliability Characteristics of Ferroelectric Si: HfO₂ Thin Films for Memory Applications

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Authors

SMStefan MuellerMarquette UniversityJMJohannes MüllerAirbus (Italy)USUwe SchroederIBM (United States)

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Mueller et al. (2012) studied this question.

synapsesocial.com/papers/6a02e71a67f6ea5cc8756cf4https://doi.org/10.1109/tdmr.2012.2216269
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