Configuration Dependence in the Extraction of Dynamic Transfer Characteristic Hysteresis in Switching Applications of SiC MOSFETs

The transfer characteristics of silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are fundamental indicators relevant to their practical applications, with hysteresis serving as a critical measure of the interface defect density within the gate oxide layer. However, measurement delays pose challenges to the accurate extraction of these transfer characteristics. This study introduces an on-the-fly (OTF) technology to characterize dynamic transfer characteristics, effectively eliminating measurement delays and complex preconditioning operations. This advancement enables a more pronounced observation of hysteresis under continuous switching stress, providing a more realistic dynamic evaluation compared to conventional static measurements. Unlike previous studies, this research directly investigates the impact of various switching application configurations on extraction results and provides a physical basis for these findings. The results suggest an optimal stress configuration for the stable and maximized extraction of significant hysteresis, characterized by a lower switching voltage, an intentionally reduced switching speed, a lower temperature, and an increased gate voltage amplitude. Rather than serving as a direct online condition monitoring tool, this research aims to establish a robust offline characterization platform. This method bridges the gap between static testing and continuous dynamic operations, providing insight into the interface trap dynamics of SiC MOSFETs.