Films of 60/40 PZT by the mod process for memory applications

Films of PbZr0.6Ti0.4O3 (60/40 PZT) that were nearly pin hole free with uniform composition and thickness were prepared by the metallo-organic decomposition (MOD) process on Pt coated Si wafers. The polarization reversal characteristics important for memory applications were studied as a function of film thickness and annealing conditions. The processing conditions were not optimized, but the switching characteristics achieved with ± 5 volt pulses both initially and after 1010 reversals were promising.