Redissolution of precipitated oxygen in Czochralski-grown silicon wafers

The redissolution behavior of precipitated oxygen in Czochralski-grown silicon wafers during high-temperature annealing (1230 °C) is investigated by means of infrared absorption and transmission electron microscopy. It is shown that the oxygen redissolution rate, which is 102∼103 larger than the precipitation rate, is highly dependent on the oxygen precipitation temperature which in turn determines the form of the precipitates. The dependence is described by the difference in the total surface area of precipitates and by the dislocation pinning effect.