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March 30, 1998Applied Physics LettersOpen Access

Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

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Authors

RZRong ZhangNanjing University of Science and TechnologyTKT. F. KuechUniversity of Wisconsin–Madison

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Zhang et al. (1998) studied this question.

synapsesocial.com/papers/6aa9e2c128eb848784fc906ahttps://doi.org/10.1063/1.121144
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