The design, fabrication, and characterisation of a monolithically integrated narrowband photoreceiver on InP for 38 GHz operation is reported. The device comprises an ultrafast sub-half-micrometre InGaAs metal-semiconductor-metal photodetector and a reactive matching network based on coplanar waveguides. Compared to a purely resistive match, a 4 dB increase in the power transfer between the detector and the 50 Ω load is achieved.
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Engel et al. (1998) studied this question.
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