Electric field variation of photoconductivity quenching due to hot electron capture in ZnIn2S4

This is the authors' abstract. We don't add key points for this paper.

The study of the photoconductivity quenching as a function of the electric field in the ternary compound ZnIn2S4 has given evidence of a level localized at about 1.77 eV above the valence band which is responsible for the capture of hot electrons and for the N-type negative resistance. By a rough estimate of the quenching compared with the experimental it was possible to determine the potential barrier offered by the centre to the electrons, for a fixed illumination intensity of the gap energy light upon the crystal.