Room-temperature growth of AlN thin films by laser ablation

Excimer laser ablation of compressed AlN powder has been used to grow thin AlN films at room temperature on a variety of substrates. The films have a band gap of 6.15 eV as measured by UV absorption. Examination with a scanning electron microscope and an optical microscope shows that the films are smooth. The IR spectrum has an absorption characteristic of AlN. Growth rates are extremely rapid, exceeding 70 nm/min.