X-band high power SiGe BiCMOS multi-function chip for active phased array radars

An X-band high power multi-function chip has been designed and fabricated using 0.25 µm SiGe BiCMOS technology, for a transmit/receive (T/R) module of phased array radar systems. The high power and wideband performance was achieved by the integrated power amplifiers employing an active bias circuit and a series feedback technique. The fabricated multi-function chip with a compact size of 8.4 mm2 (3.5×2.4 mm) exhibits a transmit/receive gain of 30/20 dB and a P1dB of 18 dBm from 8 to 11 GHz.