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High-performance ultraviolet (UV) photodetectors are critically needed for a wide range of applications. However, simultaneously achieving high sensitivity and fast response speed remains a significant challenge. In this work, we demonstrate the fabrication of a vertical PtSe2/4H-SiC van der Waals heterostructure (vdWH) photodiode with an ultrathin AlOx interfacial passivation layer for UV detection. The synergistic combination of the high carrier mobility of 2D PtSe2 and the strong UV absorption of 4H-SiC, along with the suppressed interface recombination and enhanced carrier collection, enables ultrasensitive and ultrafast self-powered UV detection. Moreover, the applications of PtSe2/4H-SiC device in UV imaging and flame detection are successfully demonstrated, highlighting its potential for next-generation UV optoelectronic devices and systems in biomedical diagnostics, space communications, and environmental monitoring.
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Wu et al. (2025) studied this question.
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