The sub-band structure at zero temperature of a two-dimensional electron gas at an Al x Ga 1-x As-GaAs heterojunction interface is calculated in the envelope function approach. A model is developed in which the potential energy, the sub-band structure, the areal density of the electron gas as well as depletion lengths can be calculated as a function of material properties and growth parameters only. The authors have also calculated analytically the minimum value of the donor concentration in the Al x Ga 1-x As layer for obtaining an electron gas at zero temperature.
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Hurkx et al. (1985) studied this question.
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