Optimization of the electrical and optical properties of Sb-Sn-O thin films

Effects of Sb doping, sintering temperature and precoating with oxides on the optical and electrical properties of Sb-Sn-O thin films ~100 nm thick deposited by electron beam from bulk samples prepared using a sintering technique are investigated and discussed. All films have partially amorphous structure. The quality of the films as transparent-conductive ones has been examined using the so-called factor of merit. It was found to be a maximum for a film with Sb/Sn = 0.10 and enhanced by precoating with SiO 2 as well as annealing. The lowest resistivity of about 3.65 × 10 -3 C m and transmittance of ~83.6% were attained for the unprecoated film after annealing for 5 h at 550 °C.