Participation of shallow and deep traps in the processes of energy transfer and capture is studied by means of time- resolved emission spectroscopy and thermoluminescence in several groups of the Ce3+and Pr3+-doped complex oxide single crystal scintillators. Tunnelling-driven recombination processes are distinguished in all the groups of examined materials: closely spaced electron and hole traps give rise to the t-1phosphorescence decays at low temperatures in the Ce-doped aluminum garnets and perovskites, while thermally assisted tunneling process is proposed to explain temperature independent trap depth in glow curve peaks within 50-250 degC in Ce-doped lutetium orthosilicates.
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Nikl et al. (2008) studied this question.
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