Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors

The random telegraph noise (RTN) characteristics in numerous metal–oxide–semiconductor field-effect transistors were evaluated accurately with small floor noise of 59 µV. Because of the small floor noise RTN characteristics with small amplitudes could be measured. The time constants: time to emission (τe) and time to capture (τc) were extracted from measurement results with sampling period of 1 µs and sampling time of 600 s, and they were distributed for over six orders of magnitude. Based on the extracted data of τe and τc, there is no correlation between <?CDATA τ ₑ?> and <?CDATA τ c?> . Also, it was clarified that the time constant ratio ( <?CDATA τ c / τ ₑ?> ) were distributed over nine orders of magnitude. Additionally, the gate bias dependence of <?CDATA τ ₑ?> , <?CDATA τ c?> , and <?CDATA τ c / τ ₑ?> were analyzed. The distribution of <?CDATA τ ₑ?> is shifted to larger values with the increase of drain current (I D) and that of <?CDATA τ c?> is shifted to smaller values with the increase of I D.