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Experimental study demonstrates controlled doping and high mobility in homoepitaxial films, indicating kinetic pathways to tune oxide electronics.
We have studied the growth dynamics and electronic properties of SrTiO3−δ homoepitaxial films by pulsed laser deposition. We find that the two dominant factors determining the growth mode are the kinetics of surface crystallization and of oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies can be frozen in the film, allowing controlled, systematic doping across a metal-insulator transition. Metallic films can be grown, exhibiting Hall mobilities as high as 25000cm2∕Vs.
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A 2007 study studied this question.
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