Performance analysis of gate engineered dielectrically modulated TFET biosensors

This paper presents, a short gate dual metal source electrode dielectrically modulated tunnel field-effect transistor (SDM SE DM-TFET) has been compared with conventional dual gate-source electrode dielectrically modulated tunnel field-effect transistor (DG SE DM-TFET) for the biosensing application. Hence, gate work function engineering is applied in our proposed device in which gate metal is split into two different work function segments as ϕG1=4.53eV and ϕG2=3.8eV. Additionally, a potential of −1.2 V is applied to the source electrode having a work function of ϕSE=4.53eV. ϕG2 is the gate electrode work function at the source side and ϕG1 is the gate electrode work function at the drain side. The investigation is performed by varying the dielectric constant and charge density for choosing an optimised value for ϕG2. The performance comparison has been done in terms of ION current, sensitivity and sensing speed. It can be verified from the simulated results that our proposed device exhibits superior performance as compared to the existing structures.