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This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The PA module achieved a maximum gain of 30 dB, maintaining over 20-dB gain across the 220–310-GHz range, with a saturated output power of 9.1dBm. We applied a spectral digital predistortion (DPD) method to compensate for the distortion of the PA module and achieved a 280-Gb/s (35-GBaud 256QAM) signal generation at 0-dBm output power, which is the highest data rate reported in the 300-GHz band.
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Jyo et al. (2025) studied this question.
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