What question did this study set out to answer?

To assess chemically enhanced focused ion beam micromachining on thin-film copper deposited on silicon substrates across various barrier and dielectric layers.

November 1, 2001Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Chemically enhanced focused ion beam micromachining of copper

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Authors

JGJ. C. GonzálezUniversidade Federal de Minas Gerais DGD. P. GriffisNorth Carolina State University TMT. T. MiauSchlumberger (United States)

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Implication

Experimental study demonstrates enhanced milling homogeneity in copper thin films using gas-assisted focused ion beams, indicating improved semiconductor fabrication precision.

Key Points

To assess chemically enhanced focused ion beam micromachining on thin-film copper deposited on silicon substrates across various barrier and dielectric layers.
Tested focused ion beam milling on thin-film copper (Cu) on silicon (Si) substrates, including dielectric and barrier materials.
Introduced chlorine-containing gases (C2Cl4, C2H4Cl2, CHCl2CCl3) and oxygen-containing vapors (ethanol, methanol, water vapor) to assist the milling process.
Chemical gas assistance mitigated crystallographic channeling effects, significantly improving milling homogeneity and end-point detection.
Etching with ethanol vapor achieved a Cu/SiO2 milling selectivity greater than 4.

Cite This Study

González et al. (2001) studied this question.

synapsesocial.com/papers/6aacd2aaa37e8eb65f20f3cc https://doi.org/10.1116/1.1418406

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Implication

Experimental study demonstrates enhanced milling homogeneity in copper thin films using gas-assisted focused ion beams, indicating improved semiconductor fabrication precision.

Chemically enhanced focused ion beam micromachining of copper

Discussion

Member takes

Implication

Key Points

Cite This Study

Chemically enhanced focused ion beam micromachining of copper

Discussion

Member takes

Implication

Key Points

Cite This Study

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