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A Ku‐band 3‐bit switch‐type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15‐μm pHEMT process. For all eight states, the insertion loss is 6.5 ± 1.5 dB from 10–14 GHz and the input return loss is >8.5 dB over 10–14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2.
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Tsai et al. (2015) studied this question.
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