Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

We report high performance amorphous Indium-Gallium-Zinc-Oxide (a -IGZO) thin-film transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility (μ eff ) of 55.3cm2/V· s at an inversion carrier density (Nᵢₙᵥ ) of 5× 10^12 cm-2, and large ION/IOFF of >109. Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (Gm, max) measured from 20 pristine TFT devices. This a -IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI).