Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 °C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm2/Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and ION/IOFFof more than 107. The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices.