SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma

SiGe gate oxide prepared at low temperatures (25–400 °C) by electron cyclotron resonance (ECR) plasma is reported. 100–200 Å oxides were grown on Si0.8Ge0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides’ measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.