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January 1, 1990Applied Physics Letters

Rapid thermal oxidation of GeSi strained layers

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Authors

DNDeepak Kumar NayakBudge Budge Institute of TechnologyKKK. KamjooUniversity of California, Los AngelesJWJ.C.S. WooDaegu Gyeongbuk Institute of Science and Technology

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Nayak et al. (1990) studied this question.

synapsesocial.com/papers/6a83ec17fd07e211f9fe21dfhttps://doi.org/10.1063/1.102653
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Also Consider

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