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August 1, 1975IEEE Transactions on Electron Devices

Generation-recombination noise produced in the channel of JFET's

C.F. Hiatt A. van der Ziel K. M. van Vliet

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Abstract

Measurements are presented of noise in JFET's at low temperatures (80-200 K) for devices having a low pinch-off voltage. The noise spectra show the presence of several types of generation-recombination g-r processes. Two processes are attributed to traps in the channel. Further, at the lowest temperatures a long plateau, associated with donor transitions, is observed.

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Cite This Study

Hiatt et al. (1975) studied this question.

synapsesocial.com/papers/6aadd9a69cf7b8608e873c4c https://doi.org/10.1109/t-ed.1975.18187

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