Quantum Dot LEDs: Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer (Adv. Funct. Mater. 33/2019)

In article number 1808377, Huaibin Shen, Lin Song Li, and co-workers fabricate light-emitting diodes with an external quantum efficiency >30% by exploiting Zn1−xCdxSe core/shell quantum dots with ZnSe as the intermediate layer and ultrathin ZnS. The maximum brightness achieved is up to 334 000 cd m−2, and the operational lifetime is extended to ≈1 800 000 h at 100 cd m−2.