Minority Carriers Induced Schottky Barrier Height Modulation in Current Behavior of Metal-Oxide-Semiconductor Tunneling Diode

The influence of the lateral electron diffusion current at the edge of p-type metal-oxide-semiconductor (MOS) capacitor is investigated. By comparing two different gate electrode patterns, it is found that the lateral electron diffusion current per perimeter with magnitude 10−10 (A/cm) can provide additional inversion charges near the SiO2/Si interface, resulting in larger voltage drop in the oxide and lower Schottky barrier height of the holes. This effect allows more hole current with magnitude 10−9∼10−8 (A/cm) to inject into the silicon substrate. As a result, the current of MOS capacitor is edge-dependent and controlled by the lateral electron diffusion current.