Defect concentration profiles covering a range of ∼100 μm in high-energy proton-irradiated silicon (3 MeV) have been investigated using deep-level transient spectroscopy. Radiation damage is produced in a layer between the surface and the proton end of range. The maximum defect concentrations are found at about the projected proton range. In this region, the relative concentration of centers with favorable energy levels for power device applications is remarkably large.
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Wondrak et al. (1987) studied this question.
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