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In this paper we demonstrate the use of a split-cylinder cavity for characterizing semiconductors of low to medium loss over a temperature range of 173 K (−100 °C) to 373 K (+100 °C) at microwave frequencies (9–30 GHz). Complex permittivity measurements of silicon (Si) and gallium arsenide (GaAs) wafers are presented in order to evaluate the cavity's performance with this type of material.
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Riddle et al. (2008) studied this question.
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