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September 1, 1997Integrated ferroelectrics

Effect of rapid thermal annealing on the interface trap density between Pt and (Ba,Sr)TiO3 thin film

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Authors

DKDong-Hwa KwakBJByung-Tak JangSYSeon YongSK Group (United States)

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Cite This Study

Kwak et al. (1997) studied this question.

synapsesocial.com/papers/6aae2f769e60580df616473ehttps://doi.org/10.1080/10584589708012992
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1RuO2/TiN-Based Storage Electrodes for (Ba, Sr)TiO3 Dynamic Random Access Memory Capacitors1995 · 75 citations
  2. 2RuO2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials1994 · 27 citations
  3. 3High dielectric constant (Ba,Sr)TiO3 thin films prepared on RuO2/sapphire1994 · 142 citations