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September 1, 1995Japanese Journal of Applied Physics

RuO2/TiN-Based Storage Electrodes for (Ba, Sr)TiO3 Dynamic Random Access Memory Capacitors

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Authors

KTKoichi TakemuraHokkaido University of ScienceSYShintaro YamamichiNEC (Japan)PLPierre‐Yves LesaicherreNEC (Japan)

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Takemura et al. (1995) studied this question.

synapsesocial.com/papers/6a992c2f7a0bd180b0e12284https://doi.org/10.1143/jjap.34.5224
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High dielectric constant (Ba,Sr)TiO3 thin films prepared on RuO2/sapphire1994 · 142 citations
  2. 2RuO<sub>2</sub> Thin Films as Bottom Electrodes for High Dielectric Constant Materials1994 · 27 citations