A low-temperature (0.5T4.2 K) transport study of lightly doped n-type InSb, n=5×{}10¹⁴ cm^-3, shows weak localization corrections to the resistance at low magnetic fields, B{~}30 mT, and an activated magnetoresistance in the quantum limit, i.e., magnetic freezeout. From these results, we argue that weak localization is not a precursor to the magnetic-field-induced metal-insulator transition in this narrow-gap system, since it is quenched well before the onset of magnetic freezeout.
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Mani et al. (1991) studied this question.
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