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Reaction of thin titanium films on silicon has been observed in forming polyphase silicides by flash irradiations with full width at half-maximum of 100 ms. Ion back scattering and optical micrographic studies show that the metallization occurs only when the temperature of the metal surface reaches the melting point. The experimental threshold irradiation energy density for the metal surface to reach the melting point is 17.6 J/cm2, which is close to the theoretical value of 20.4 J/cm2, based on the strong-thermal-diffusion-limit approach.
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Lue et al. (1981) studied this question.
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