Temperature dependence of lasing wavelength in a GaInNAs laser diode

The temperature dependence of lasing wavelength in 1.2-μm or 1.3-μm-range GaInNAs edge-emitting laser diodes (LD) was found to be small. It is almost independent of the characteristic temperature (T0) and is equivalent to the temperature shift of the bandgap wavelength of GaInNAs (0.42 nm//spl deg/C). Since the dependence is smaller than that of 1.3-μm-range conventional InGaAsP LD's and also smaller than the required value (0. The small dependence is due to the small effect of band filling on lasing wavelength from the deep quantum well in GaInNAs LD's.