365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes

The authors report gallium nitride (GaN) nanoscale light emitting diodes utilizing n-GaN nanowire/p-GaN substrate homojunctions. Utilizing electric field assisted alignment, n-type gallium nitride nanowires were placed on the surface of a p-doped GaN thin film. Electroluminescence with 365nm peak wavelength and 25nm full width half maximum was observed from these p-n junctions. These nanowire/epilayer p-n junction diodes were passivated with a thin layer of SiO2 and did not exhibit any parasitic emission related to the bulk or surface defects. The present fabrication scheme, utilizing only batch fabrication techniques, yields reliable, electrically injected nanoscale ultraviolet light sources.