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We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖ [100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.
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Melville et al. (2013) studied this question.
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