A low frequency ac measuring-current technique has been used to investigate the magnetoresistance and Hall effect in Hg1−xMnxTe over a temperature range from 2 to 300 K. The exchange interaction between the Mn++ ions and the band carriers causes the energy bands to be significantly modified in the presence of a magnetic field. As a result magnetic boil-off and magnetic-field-enhanced hopping have been observed in p-type semiconducting samples. These effects produce a large decrease of resistance with increasing magnetic field at low temperatures.
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Anderson et al. (1983) studied this question.