Two silicon wafers were bonded together with spin-on glass as the adhesive. Bonding strength depended heavily on the surface treatment. This was also confirmed by IR reflection measurement. A silicon-on-insulator (SOI) structure was achieved by thinning one of the wafers after the bonding. The resultant 5μm-thick SOI layer was stable at high temperatures and showed no degradation in its electrical characteristics.
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Yamada et al. (1987) studied this question.
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