A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

In this paper, we present a simple, complete and analytical deep-submicrometer silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (SOI MOSFET) model for accurate simulation of digital/analog circuits. The model was developed using the drift-diffusion equation with a modified mobility formula to account for velocity overshoot, and was based on the quasi-two-dimensional Poisson's equation. It is a charge control model, expressed as a function of inversion charge per unit area. The drain-induced barrier lowering and the channel-length modulation were solved using the quasi 2-D approach and were incorporated into the drain current equation. The mobility reduction due to the transverse field was also taken into consideration. The resulting single-piece drain current equation is smoothly continuous; it has been successfully applied to model both submicrometer and deep-submicrometer n-type SOI MOSFETs with various channel lengths, and a good agreement between the modeled and experimental data has been obtained. This model uses few fitting parameters and can be employed in a circuit simulator to improve the convergence of simulation and computational efficiency.