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Experimental evaluation demonstrates heavy-ion beam characterization and SRAM error cross-sections, highlighting CERN's high-energy testing capabilities for microelectronics.
We present the progress related to CERN’s capacity of delivering highly penetrating, high-LET heavy ions for radiation effect testing of electronic components within the CHIMERA (CHARM High-energy Ions for Micro Electronics Reliability Assurance) project. Profiting from the existing accelerator infrastructure, Monte Carlo simulations and a 300 μm-thick silicon diode, we highlight the beam characterization capabilities and a summary of the beam properties. Finally, we present the comparison of the SRAM SEE cross-section measurements with respect to other heavy ion facilities.
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Biłko et al. (2024) studied this question.
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