Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications

This is the authors' abstract. We don't add key points for this paper.

This article presents the results of dynamic measurements of 3-D multilevel cell (MLC)NANDflash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors inNANDdevices are discussed.